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MPSW56RLRAG Tech Specifications

MPSW56RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC -80V
Terminal Position BOTTOM
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
Transition Frequency 50MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 4V
Height 7.87mm
Width 4.19mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Frequency 50MHz
Base Part Number MPSW56
Number of Elements 1
Power Dissipation 1W
Gain Bandwidth Product 50MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 80V
hFE Min 100
Length 5.21mm
Radiation Hardening No
Lead Free Lead Free
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MPSW56RLRAG Documents

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