MTD6N15T4G Tech Specifications

MTD6N15T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 150V
Terminal Form GULL WING
Current Rating 6A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 50 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 200 ns
Threshold Voltage 4.5V
Drain Current-Max (Abs) (ID) 6A
Pulsed Drain Current-Max (IDM) 20A
Length 6.73mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Resistance 300MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.25W Ta 20W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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MTD6N15T4G Documents

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