MUN2213T1G Tech Specifications

Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Published 2003
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 338mW
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MUN2213
Max Output Current 100mA
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Operating Supply Voltage 50V
Polarity NPN
Power Dissipation 230mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
hFE Min 80
Continuous Collector Current 100mA
Height 1.09mm
Width 1.5mm
REACH SVHC No SVHC
Lead Free Lead Free
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MUN2213T1G Documents

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