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MUN5234T1 Tech Specifications

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Published 2007
Part Status Obsolete
Number of Terminations 3
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTOR RATIO 2.14
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 202mW
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Power Dissipation 202mW
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Current Rating 100mA
Base Part Number MUN52**T
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
hFE Min 80
Continuous Collector Current 100mA
RoHS Status Non-RoHS Compliant
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MUN5234T1 Documents

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