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MUN5311DW1T1G Tech Specifications

TRANS PREBIAS NPN/PNP SOT363

Product Attribute Attribute Value
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MUN53**DW1
Max Output Current 100mA
Number of Elements 2
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
Length 2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 250mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Operating Supply Voltage 50V
Polarity NPN, PNP
Power Dissipation 187mW
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage 250mV
hFE Min 35
Continuous Collector Current 100mA
Height 900μm
Width 1.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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