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MVGSF1N02LT1G Tech Specifications

MOSFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 1997
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 400mW Ta
Power Dissipation 400mW
FET Type N-Channel
Vgs(th) (Max) @ Id 2.4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 750mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 750mA
Drain Current-Max (Abs) (ID) 0.75A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Not For New Designs
ECCN Code EAR99
Subcategory FET General Purpose Powers
Pin Count 3
Element Configuration Single
Turn On Delay Time 2.5 ns
Rds On (Max) @ Id, Vgs 90m Ω @ 1.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 5V
Rise Time 1ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
RoHS Status ROHS3 Compliant
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MVGSF1N02LT1G Documents

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