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NCV8440ASTT3G Tech Specifications

MOSFET N-CH 59V 2.6A SOT-223-4

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 1.69W Ta
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.9V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Continuous Drain Current (ID) 2.6A
Drain-source On Resistance-Max 0.11Ohm
DS Breakdown Voltage-Min 52V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 4
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Drain to Source Voltage (Vdss) 59V
Vgs (Max) ±15V
Gate to Source Voltage (Vgs) 15V
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status ROHS3 Compliant
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