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NDD03N80Z-1G Tech Specifications

Trans MOSFET N-CH 800V 2.9A 3-Pin(3+Tab) IPAK Rail

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 96W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9 ns
Rds On (Max) @ Id, Vgs 4.5 Ω @ 1.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 800V
Vgs (Max) ±30V
Turn-Off Delay Time 17 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 100 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Pin Count 4
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 50μA
Current - Continuous Drain (Id) @ 25°C 2.9A Tc
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 2.9A
Drain Current-Max (Abs) (ID) 1.9A
DS Breakdown Voltage-Min 800V
Height 7.62mm
Width 2.38mm
RoHS Status RoHS Compliant
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