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NDDP010N25AZ-1H Tech Specifications

ON SEMICONDUCTOR NDDP010N25AZ-1H MOSFET Transistor, N Channel, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e6
Part Status Obsolete
Number of Terminations 3
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 1W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Rise Time 26ns
Vgs (Max) ±30V
Turn-Off Delay Time 44 ns
Threshold Voltage 4.5V
Drain-source On Resistance-Max 0.42Ohm
Height 7mm
Width 2.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 420m Ω @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 31 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Length 6.5mm
REACH SVHC No SVHC
Lead Free Lead Free
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NDDP010N25AZ-1H Documents

Download datasheets and manufacturer documentation for NDDP010N25AZ-1H

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