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NDT02N40T1G Tech Specifications

Trans MOSFET N-CH 400V 0.4A 4-Pin SOT-223 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 4
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Drain to Source Voltage (Vdss) 400V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 1.6A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 4
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Rds On (Max) @ Id, Vgs 5.5 Ω @ 220mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 400mA Tc
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 400mA
Drain-source On Resistance-Max 0.0055Ohm
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status RoHS Compliant
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NDT02N40T1G Documents

Download datasheets and manufacturer documentation for NDT02N40T1G

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