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NGTB10N60R2DT4G Tech Specifications

NGTB10N60R2DT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 175°C TJ
Published 2017
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 72W
Element Configuration Single
Power - Max 72W
Max Collector Current 20A
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Current - Collector Pulsed (Icm) 40A
Switching Energy 412μJ (on), 140μJ (off)
Length 6.73mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Terminal Finish Tin (Sn)
Reach Compliance Code not_compliant
Input Type Standard
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 90 ns
Collector Emitter Saturation Voltage 1.7V
Test Condition 300V, 10A, 30 Ω, 15V
Gate Charge 53nC
Td (on/off) @ 25°C 48ns/120ns
Height 2.38mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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NGTB10N60R2DT4G Documents

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