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NGTB20N135IHRWG Tech Specifications

Trans IGBT Chip N-CH 1350V 40A 350000mW 3-Pin(3+Tab) TO-247 Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Contact Plating Tin
Package / Case TO-247-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Max Power Dissipation 394W
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 40A
Voltage - Collector Emitter Breakdown (Max) 1350V
Test Condition 600V, 20A, 10 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 600μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -40°C~175°C TJ
Published 1999
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Power Dissipation 394W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.35kV
Collector Emitter Breakdown Voltage 1.35kV
Collector Emitter Saturation Voltage 2.2V
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 20A
Gate Charge 234nC
Td (on/off) @ 25°C -/245ns
Gate-Emitter Voltage-Max 20V
Height 21.4mm
Width 5.3mm
RoHS Status ROHS3 Compliant
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