NGTB30N120IHSWG Tech Specifications

NGTB30N120IHSWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case TO-247-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Power Dissipation 192W
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Gate Charge 220nC
Td (on/off) @ 25°C -/210ns
Gate-Emitter Voltage-Max 20V
Height 21.08mm
Width 5.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 192W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 60A
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 30A, 10 Ω, 15V
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
Switching Energy 1mJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.26mm
REACH SVHC No SVHC
Lead Free Lead Free
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