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NGTB40N120SWG Tech Specifications

NGTB40N120SWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Element Configuration Single
Power - Max 535W
Max Collector Current 80A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Gate Charge 313nC
Td (on/off) @ 25°C 116ns/286ns
Height 21.4mm
Width 5.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Max Power Dissipation 535W
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Collector Emitter Voltage (VCEO) 2.4V
Reverse Recovery Time 240 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 40A, 10 Ω, 15V
IGBT Type Trench
Current - Collector Pulsed (Icm) 200A
Switching Energy 3.4mJ (on), 1.1mJ (off)
Length 16.25mm
REACH SVHC No SVHC
Lead Free Lead Free
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NGTB40N120SWG Documents

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