NGTG35N65FL2WG Tech Specifications

ON SEMICONDUCTOR NGTG35N65FL2WG IGBT Single Transistor, UPS & Solar Application, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 Pins

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2015
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300W
Element Configuration Single
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 650V
Collector Emitter Breakdown Voltage 650V
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
IGBT Type Field Stop
Current - Collector Pulsed (Icm) 120A
Switching Energy 840μJ (on), 280μJ (off)
Length 16.26mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 300W
Polarity/Channel Type N-CHANNEL
Max Collector Current 70A
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 35A, 10 Ω, 15V
Turn Off Time-Nom (toff) 231 ns
Gate Charge 125nC
Td (on/off) @ 25°C 72ns/132ns
Height 21.08mm
Width 5.3mm
RoHS Status ROHS3 Compliant
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