NGTG50N60FLWG Tech Specifications

NGTG50N60FLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 223W
Element Configuration Single
Power - Max 223W
Polarity/Channel Type N-CHANNEL
Max Collector Current 100A
Collector Emitter Saturation Voltage 1.65V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Gate Charge 310nC
Td (on/off) @ 25°C 116ns/292ns
Gate-Emitter Voltage-Max 20V
Height 21.08mm
Width 5.3mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Package / Case TO-247-3
Number of Pins 3
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Input Type Standard
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 50A, 10 Ω, 15V
IGBT Type Trench
Current - Collector Pulsed (Icm) 200A
Switching Energy 1.1mJ (on), 600μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Length 16.26mm
REACH SVHC No SVHC
Lead Free Lead Free
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