NJD2873T4G Tech Specifications

NJD2873T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -65°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 50V
Terminal Form GULL WING
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 1.68W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Transition Frequency 65MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory Other Transistors
Max Power Dissipation 1.68W
Peak Reflow Temperature (Cel) 260
Frequency 65MHz
Base Part Number NJD2873
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 65MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 50V
hFE Min 120
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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NJD2873T4G Documents

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