NJV4030PT1G Tech Specifications

NJV4030PT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188.014037mg
Operating Temperature -55°C~150°C TJ
Published 2000
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 2W
Gain Bandwidth Product 160MHz
Transistor Type PNP
Max Collector Current 3A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 4
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Form GULL WING
Frequency 160MHz
Pin Count 4
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Transition Frequency 160MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
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NJV4030PT1G Documents

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