NJVMJD45H11T4G Tech Specifications

NJVMJD45H11T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power - Max 1.75W
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 90MHz
Max Breakdown Voltage 80V
hFE Min 60
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Max Power Dissipation 1.75W
Pin Count 3
Number of Elements 1
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 90MHz
Transistor Type PNP
Max Collector Current 8A
Current - Collector Cutoff (Max) 1μA
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
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