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NJW21194G Tech Specifications

NJW21194G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 29 Weeks
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Frequency 4MHz
Number of Elements 1
Power Dissipation 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Transition Frequency 4MHz
Max Breakdown Voltage 250V
Emitter Base Voltage (VEBO) 5V
Height 20.1mm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 200mW
Pin Count 3
Element Configuration Single
Power - Max 200W
Gain Bandwidth Product 4MHz
Transistor Type NPN
Max Collector Current 16A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 4V
Collector Base Voltage (VCBO) 400V
hFE Min 20
Length 15.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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NJW21194G Documents

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