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NJW3281G Tech Specifications

NJW3281G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 200W
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Vce Saturation (Max) @ Ib, Ic 600mV @ 800mA, 8A
Transition Frequency 30MHz
Max Breakdown Voltage 250V
Emitter Base Voltage (VEBO) 5V
Height 20.1mm
Width 5mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature -65°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Frequency 30MHz
Number of Elements 1
Power Dissipation 200W
Gain Bandwidth Product 30MHz
Transistor Type NPN
Max Collector Current 15A
Current - Collector Cutoff (Max) 50μA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 250V
hFE Min 75
Length 15.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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NJW3281G Documents

Download datasheets and manufacturer documentation for NJW3281G

  • Datasheets

Others include   "NJW32"   parts

The following parts include  'NJW32' 

Part # Manufacturer Category Availability
NJW3281G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single 2484
NJW3281G/NJW1302G AMI Semiconductor / ON Semiconductor Specialized Hot ICs 2254

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