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NSS30100LT1G Tech Specifications

NSS30100LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -30V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Base Part Number NSS30100
Number of Elements 1
Power Dissipation 710mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage -650mV
Collector Base Voltage (VCBO) 50V
hFE Min 100
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 310mW
Terminal Form GULL WING
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power - Max 310mW
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 650mV @ 200mA, 2A
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
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NSS30100LT1G Documents

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