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NSS60200LT1G Tech Specifications

NSS60200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 540mW
Terminal Form GULL WING
Frequency 100MHz
Base Part Number NSS60200
Number of Elements 1
Power Dissipation 540mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -30mV
Collector Base Voltage (VCBO) 80V
hFE Min 150
Length 3.04mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power - Max 460mW
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 60V
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A
Transition Frequency 100MHz
Max Breakdown Voltage 60V
Emitter Base Voltage (VEBO) 7V
Height 1.01mm
Width 1.4mm
REACH SVHC No SVHC
Lead Free Lead Free
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NSS60200LT1G Documents

Download datasheets and manufacturer documentation for NSS60200LT1G

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