NSV40200LT1G Tech Specifications

NSV40200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Surface Mount YES
Weight 1.437803g
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
Subcategory Other Transistors
Base Part Number NSS40200
Element Configuration Single
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) -7V
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 460mW
Pin Count 3
Halogen Free Halogen Free
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 170mV @ 200mA, 2A
Max Frequency 100MHz
Collector Emitter Saturation Voltage -135mV
Collector Base Voltage (VCBO) -40V
Height 1.11mm
Width 2.64mm
RoHS Status ROHS3 Compliant
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