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NSV60601MZ4T3G Tech Specifications

NSV60601MZ4T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Terminal Finish Tin (Sn)
Max Power Dissipation 800mW
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 600mA, 6A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Base Part Number NSS60601
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 800mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 6A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 100MHz
Turn On Time-Max (ton) 200ns
RoHS Status ROHS3 Compliant
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NSV60601MZ4T3G Documents

Download datasheets and manufacturer documentation for NSV60601MZ4T3G

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