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NSVDTC123JET1G
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NSVDTC123JET1G Tech Specifications
TRANS NPN 50V 0.1A SC75
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Pre-Biased BJT Transistors |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 8 Weeks |
Mount | Surface Mount |
Package / Case | SC-75, SOT-416 |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 3 |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 21 |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
Number of Elements | 1 |
Power - Max | 200mW |
Polarity/Channel Type | NPN |
Collector Emitter Voltage (VCEO) | 250mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Resistor - Base (R1) | 2.2 k Ω |
RoHS Status | ROHS3 Compliant |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 2 weeks ago) |
Mounting Type | Surface Mount |
Transistor Element Material | SILICON |
Published | 2006 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin (Sn) |
Max Power Dissipation | 200mW |
Terminal Form | GULL WING |
[email protected] Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G3 |
Configuration | SINGLE WITH BUILT-IN RESISTOR |
Transistor Application | SWITCHING |
Transistor Type | NPN - Pre-Biased |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
Resistor - Emitter Base (R2) | 47 k Ω |
Lead Free | Lead Free |
NSVDTC123JET1G Documents
Download datasheets and manufacturer documentation for NSVDTC123JET1G
-
Datasheets
Others include "NSVDT" parts
The following parts include 'NSVDT'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
NSVDTA113EM3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2770 |
NSVDTA113EM3T5G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVDTA114EET1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2515 |
NSVDTA114EET1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVDTA114EM3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2747 |
NSVDTA114EM3T5G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVDTA114YM3T5G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2600 |
NSVDTA114YM3T5G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVDTA115EET1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 30215 |
NSVDTA115EET1G | ON Semiconductor | Pre-Biased BJT Transistors |
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NSVDTC123JET1G brand manufacturers: ON Semiconductor, Bonchip stock, NSVDTC123JET1G reference price. NSVDTC123JET1G parameters, NSVDTC123JET1G Datasheet PDF and pin diagram description download.You can use the NSVDTC123JET1G Pluggable Connectors, DSP Datesheet PDF, find NSVDTC123JET1G pin diagram and circuit diagram and usage method of function, NSVDTC123JET1G electronics tutorials.You can download from the Bonchip.
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