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NSVMMBT6520LT1G Tech Specifications

NSVMMBT6520LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 200MHz
Element Configuration Single
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 350V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Current - Collector (Ic) (Max) 500mA
Collector Base Voltage (VCBO) 350V
hFE Min 30
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Form GULL WING
Number of Elements 1
Power Dissipation 300mW
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 350V
Transition Frequency 40MHz
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
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