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NSVMMUN2113LT3G Tech Specifications

TRANS PREBIAS PNP SOT23-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Reference Standard AEC-Q101
Number of Elements 1
Power - Max 246mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
JEDEC-95 Code TO-236AB
Collector Emitter Breakdown Voltage 50V
Resistor - Emitter Base (R2) 47 k Ω
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 246mW
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Resistor - Base (R1) 47 k Ω
RoHS Status ROHS3 Compliant
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