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NSVMSD42WT1G Tech Specifications

NSVMSD42WT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 450mW
Terminal Form GULL WING
Reference Standard AEC-Q101
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 500mV
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Base Voltage (VCBO) 300V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Power - Max 450mW
Halogen Free Halogen Free
Transistor Type NPN
Max Collector Current 150mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Radiation Hardening No
Lead Free Lead Free
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NSVMSD42WT1G Documents

Download datasheets and manufacturer documentation for NSVMSD42WT1G

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