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NSVMUN5316DW1T1G
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NSVMUN5316DW1T1G Tech Specifications
TRANS NPN/PNP 50V BIPO SC88-6
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / BJT Transistors Arrays |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 8 Weeks |
Mount | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 6 |
Additional Feature | BUILT IN BIAS RESISTOR |
Max Power Dissipation | 250mW |
Reference Standard | AEC-Q101 |
Number of Elements | 2 |
Power - Max | 250mW |
Polarity/Channel Type | NPN AND PNP |
Collector Emitter Voltage (VCEO) | 250mV |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Resistor - Base (R1) | 4.7k Ω |
Lead Free | Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Transistor Element Material | SILICON |
Published | 2014 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Terminal Finish | Tin (Sn) |
Subcategory | BIP General Purpose Small Signal |
Terminal Form | GULL WING |
JESD-30 Code | R-PDSO-G6 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Application | SWITCHING |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Max Collector Current | 100mA |
Current - Collector Cutoff (Max) | 500nA |
Collector Emitter Breakdown Voltage | 50V |
RoHS Status | ROHS3 Compliant |
NSVMUN5316DW1T1G Documents
Download datasheets and manufacturer documentation for NSVMUN5316DW1T1G
-
Datasheets
Others include "NSVMU" parts
The following parts include 'NSVMU'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
NSVMUN2112T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2673 |
NSVMUN2112T1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVMUN2212T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 3242 |
NSVMUN2212T1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVMUN2233T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 2772 |
NSVMUN2233T1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVMUN2236T1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVMUN2237T1G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Single, Pre-Biased | 18227 |
NSVMUN2237T1G | ON Semiconductor | Pre-Biased BJT Transistors | |
NSVMUN5111DW1T3G | AMI Semiconductor / ON Semiconductor | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 443211 |
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NSVMUN5316DW1T1G brand manufacturers: ON Semiconductor, Bonchip stock, NSVMUN5316DW1T1G reference price. NSVMUN5316DW1T1G parameters, NSVMUN5316DW1T1G Datasheet PDF and pin diagram description download.You can use the NSVMUN5316DW1T1G Pluggable Connectors, DSP Datesheet PDF, find NSVMUN5316DW1T1G pin diagram and circuit diagram and usage method of function, NSVMUN5316DW1T1G electronics tutorials.You can download from the Bonchip.
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Returning | Returning | All returns should be made within 60 days of date of invoice and be accompanied by the original invoice number, certificate of guarantee card, parts picture and a brief explanation or test report of the reason for the return. Returns will not be accepted after 60 days. Returned merchandise must be in original packaging and in resalable condition. Parts returned due to customer error at time of quote or sale will not be accepted. Please contact customer service for a return authorization before return shipment. |
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