NTB45N06LT4G Tech Specifications

NTB45N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 26MOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Current Rating 45A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 2.4W Ta 125W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 22.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V
Fall Time (Typ) 158 ns
Continuous Drain Current (ID) 45A
Drain to Source Breakdown Voltage 60V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 60V
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 45A Ta
Rise Time 341ns
Vgs (Max) ±15V
Turn-Off Delay Time 36 ns
Gate to Source Voltage (Vgs) 15V
Avalanche Energy Rating (Eas) 240 mJ
Length 10.29mm
Radiation Hardening No
Lead Free Lead Free
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