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NTB6412ANT4G Tech Specifications

MOSFET N-CH 100V 58A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 58A Tc
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 126 ns
Continuous Drain Current (ID) 58A
Pulsed Drain Current-Max (IDM) 240A
Length 10.29mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 167W
Turn On Delay Time 16 ns
Rds On (Max) @ Id, Vgs 18.2m Ω @ 58A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Gate to Source Voltage (Vgs) 20V
Height 4.83mm
Width 9.65mm
RoHS Status RoHS Compliant
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