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NTB90N02T4G Tech Specifications

MOSFET N-CH 24V 90A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 24V
Terminal Form GULL WING
Current Rating 90A
Pin Count 3
Qualification Status Not Qualified
Power Dissipation-Max 85W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 90A Ta
Rise Time 90ns
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 85W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2120pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 90A
Drain-source On Resistance-Max 0.0058Ohm
Pulsed Drain Current-Max (IDM) 200A
Lead Free Lead Free
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