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NTD110N02RT4G Tech Specifications

NTD110N02RT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 110A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.5W Ta 110W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 110A
Drain Current-Max (Abs) (ID) 32A
Nominal Vgs 1.5 V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 4.1MOhm
Voltage - Rated DC 24V
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2.88W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 12.5A Ta 110A Tc
Rise Time 39ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 24V
Radiation Hardening No
Lead Free Lead Free
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