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NTD20P06L-1G Tech Specifications

MOSFET P-CH 60V 15.5A IPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 65W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15.5A Ta
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 15.5A
Drain Current-Max (Abs) (ID) 15A
Drain to Source Breakdown Voltage -60V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Current Rating -15.5A
JESD-30 Code R-PSIP-T3
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 7.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 50A
RoHS Status RoHS Compliant
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