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NTD23N03RT4G Tech Specifications

MOSFET N-CH 25V 3.8A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 22.3W
Turn On Delay Time 2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.8A Ta 17.1A Tc
Rise Time 14.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 9.9 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 23A
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.14W Ta 22.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 23A
Drain Current-Max (Abs) (ID) 3.8A
Drain to Source Breakdown Voltage 25V
RoHS Status RoHS Compliant
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