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NTD3055-150T4G Tech Specifications

MOSFET N-CH 60V 9A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 1.5W Ta 28.8W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 4.5A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 9A Ta
Rise Time 37.1ns
Vgs (Max) ±20V
Turn-Off Delay Time 12.2 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 2.38mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 122MOhm
Voltage - Rated DC 60V
Terminal Form GULL WING
Current Rating 9A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 28.8W
Turn On Delay Time 11.2 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 23 ns
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 27A
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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