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NTD40N03R-1G Tech Specifications

MOSFET N-CH 25V 7.8A IPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 40A
Pin Count 4
Qualification Status Not Qualified
Power Dissipation-Max 1.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.8A Ta 32A Tc
Rise Time 19.5ns
Vgs (Max) ±20V
Turn-Off Delay Time 16.7 ns
Threshold Voltage 1.7V
Drain Current-Max (Abs) (ID) 32A
Drain to Source Breakdown Voltage 25V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16.5m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 584pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 5.78nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.5 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.023Ohm
REACH SVHC Unknown
Lead Free Lead Free
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NTD40N03R-1G Documents

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