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NTD4813N-35G Tech Specifications

MOSFET N-CH 30V 7.6A IPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 1.27W Ta 35.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Fall Time (Typ) 19.3 ns
Continuous Drain Current (ID) 9A
Drain Current-Max (Abs) (ID) 7.6A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 72 mJ
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 1.94W
Turn On Delay Time 10.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7.6A Ta 40A Tc
Rise Time 19.3ns
Vgs (Max) ±20V
Turn-Off Delay Time 10.1 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 90A
Radiation Hardening No
Lead Free Lead Free
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