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NTD4904N-35G Tech Specifications

MOSFET NFET IPAK 30V 79A 3.7 mOhm

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 52W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.7m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3052pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 14 hours ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Subcategory FET General Purpose Power
Pin Count 3
Power Dissipation-Max 1.4W Ta 52W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Ta 79A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 79A
Drain-source On Resistance-Max 0.0055Ohm
Avalanche Energy Rating (Eas) 68.4 mJ
RoHS Status RoHS Compliant
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NTD4904N-35G Documents

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