NTD5806NT4G Tech Specifications

NTD5806NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Operating Temperature -55°C~175°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 10.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 33A Tc
Rise Time 49ns
Vgs (Max) ±20V
Turn-Off Delay Time 14.2 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 65A
Height 2.38mm
Width 6.22mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 2
Resistance 19MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 19m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2.6 ns
Continuous Drain Current (ID) 33A
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 38 mJ
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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NTD5806NT4G Documents

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