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NTD6415AN-1G Tech Specifications
MOSFET N-CH 100V 23A IPAK
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductors / Single MOSFETs Transistors |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 4 |
Operating Temperature | -55°C~175°C TJ |
Published | 2009 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 83W |
Turn On Delay Time | 10 ns |
Rds On (Max) @ Id, Vgs | 55m Ω @ 23A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Fall Time (Typ) | 37 ns |
Continuous Drain Current (ID) | 23A |
Drain to Source Breakdown Voltage | 100V |
Avalanche Energy Rating (Eas) | 79 mJ |
Length | 6.73mm |
Radiation Hardening | No |
Lead Free | Lead Free |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Mounting Type | Through Hole |
Surface Mount | NO |
Transistor Element Material | SILICON |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Number of Terminations | 3 |
Resistance | 55MOhm |
Technology | MOSFET (Metal Oxide) |
JESD-30 Code | R-PSIP-T3 |
Power Dissipation-Max | 83W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Current - Continuous Drain (Id) @ 25°C | 23A Tc |
Rise Time | 37ns |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 30 ns |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 89A |
Height | 7.62mm |
Width | 2.38mm |
RoHS Status | RoHS Compliant |
NTD6415AN-1G Documents
Download datasheets and manufacturer documentation for NTD6415AN-1G
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Datasheets
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