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NTHD5903T1G Tech Specifications

MOSFET -20V -3A Dual P-Channel

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Peak Reflow Temperature (Cel) 260
Current Rating -2.2A
Base Part Number NTHD5903
Qualification Status Not Qualified
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 155m Ω @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A
Rise Time 35ns
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 3A
Drain-source On Resistance-Max 0.155Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 6.35mm
Width 6.35mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SMD, Flat Lead
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Form C BEND
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Power Dissipation 1.1W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 600mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
Length 6.35mm
RoHS Status RoHS Compliant
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