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NTJS4151PT1G Tech Specifications

NTJS4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 47MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.3A
Pin Count 6
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 850 ps
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Rise Time 1.7ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 4.2 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 12V
Height 1mm
Width 1.35mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 3.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 2.7 ns
Threshold Voltage -400mV
Drain to Source Breakdown Voltage -20V
Length 2.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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NTJS4151PT1G Documents

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