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NTLGF3402PT1G Tech Specifications

MOSFET P-CH 20V 2.3A 6-DFN

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
Current Rating -3.9A
Pin Count 6
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series FETKY™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -20V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-XDSO-C8
Number of Elements 1
Power Dissipation-Max 1.14W Ta
Power Dissipation 1.6W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 2.3A
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 11A
Lead Free Lead Free
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NTLGF3402PT1G Documents

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