NTLJD3115PT1G Tech Specifications

NTLJD3115PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Contact Plating Tin
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Terminal Form C BEND
Current Rating -4.1A
Base Part Number NTLJD3115P
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 3.3A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Length 2mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Resistance 100MOhm
Subcategory Other Transistors
Max Power Dissipation 710mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 6
Element Configuration Dual
Power Dissipation 1.5W
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A
Rise Time 15ns
Turn-Off Delay Time 19.8 ns
Gate to Source Voltage (Vgs) 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 750μm
Width 2mm
RoHS Status ROHS3 Compliant
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