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NTLJF4156NTAG Tech Specifications

Trans MOSFET N-CH 30V 3.7A 6-Pin WDFN T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Turn On Delay Time 4.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A Tj
Rise Time 9.2ns
Vgs (Max) ±8V
Turn-Off Delay Time 14.2 ns
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 20A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 6
Technology MOSFET (Metal Oxide)
Terminal Form C BEND
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 710mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70m Ω @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 427pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) 3.7A
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Lead Free Lead Free
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