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NTMFD4901NFT3G Tech Specifications

MOSFET 2N-CH 30V 8DFN

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 7 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 8
Terminal Finish Tin (Sn)
Terminal Form FLAT
Number of Elements 2
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual), Schottky
Rds On (Max) @ Id, Vgs 6.5m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Continuous Drain Current (ID) 17.9A
Drain Current-Max (Abs) (ID) 13.5A
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 115 mJ
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 1.2W
Pin Count 8
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 1.1W 1.2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10.3A 17.9A
Drain to Source Voltage (Vdss) 30V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0035Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Radiation Hardening No
Lead Free Lead Free
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