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NTMFS4937NT1G Tech Specifications

NTMFS4937NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Contact Plating Tin
Package / Case 8-PowerTDFN, 5 Leads
Number of Pins 5
Operating Temperature -55°C~150°C TJ
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Power Dissipation 920mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2516pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Threshold Voltage 1.63V
Drain-source On Resistance-Max 0.007Ohm
Nominal Vgs 1.63 V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Subcategory FET General Purpose Power
Terminal Position DUAL
Pin Count 5
Power Dissipation-Max 920mW Ta 43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10.2A Ta 70A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
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