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NTQD6866R2G Tech Specifications

MOSFET 2N-CH 20V 4.7A 8TSSOP

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC 20V
Terminal Form GULL WING
Current Rating 6.9A
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 32m Ω @ 6.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 16V
Rise Time 45ns
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 940mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Fall Time (Typ) 90 ns
Continuous Drain Current (ID) 4.7A
Drain-source On Resistance-Max 0.032Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 175 pF
Lead Free Lead Free
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